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  features l uses high sensitivity apd two types of apds with different active areas ( 0.5 mm, 3.0 mm) are provided. l choice of high sensitivity type and low-light-level detection type c4777 detects optical signals from 10 khz to 100 mhz pulsed light and is suitable for spatial light transmission and rangefinder applications. C4777-01 provides a high photo- electric sensitivity of 1.25 10 9 v/w and low nep of 2 fw/hz 1/2 , making it excellent for fluorescence measurement and nox monitors where low-light-level detection is essential. l built-in temperature control circuit an apd chip, thermoelectric cooler and thermosensor are sealed in the same package along with the temperature control circuit, to keep the apd chip temperature constant and ensure stable measurements. l simple operation operates by just connecting to a dc power supply (+5 v, 15 v). applications l spatial light transmission l optical communication l rangefinder l fluorescence measurement l nox monitor sensor l particle counters module apd module apd module integrated with peripheral circuits c4777 series c4777 C4777-01 temperature control circuit signal output power supply first amplifier signal light si apd thermosensor thermoelectric cooler bias control circuit high voltage power supply kaccc0099ea block diagram selection guide parameter c4777 C4777-01 unit active area 0.5 3.0 mm photo sensitivity -2.5 10 5 -1.25 10 9 v/w frequency bandwidth 10 k to 100 m dc to 5 k hz 1
apd module c4777 series absolute maximum ratings parameter symbol condition value unit positive supply voltage - +7 v positive supply voltage - +16 v negative supply voltage - -16 v input power - 10 mw operating temperature topr 10 to 40 c storage temperature tstg -10 to +60 c operating/storage humidity - no condensation 70 % rh below - specification (typ. ta=25 c, vcc=+5 v, +15 v, unless otherwise noted) photoelectric section (apd) parameter symbol condition c4777 C4777-01 unit active area a 0.5 3.0 mm peak sensitivity wavelength p 800 nm spectral response range 400 to 1000 nm photo sensitivity s =800 nm, m=1 0.5 a/w gain m =800 nm 100 50 times thermoelectric cooler - one-stage two-stage - cooling temperature - 0 c temperature stability of gain - ta=10 to 40 c 3 % signal amplification section parameter symbol condition min. typ. max. unit high band 95 100 - mhz cut-off frequency low band fc -3 db - 10 15 khz noise equivalent power nep =800 nm - 80 120 fw/hz 1/2 feedback resistance rf - 10 - k ? photoelectric sensitivity - apd include, m=100 =800 nm -2.0 -2.5 -3.0 10 5 v/w output impedance - - 50 - ? maximum input light level - 0.6 0.8 - w minimum detection limit - - 0.80 1.20 nwr.m.s. parameter symbol condition min. typ. max. unit high band 4 5 - khz cut-off frequency low band fc -3 db - dc - - noise equivalent power nep =800 nm - 2 4 fw/hz 1/2 feedback resistance rf - 50 - m ? photoelectric sensitivity - apd include, m=50 =800 nm -1.0 -1.25 -1.5 10 9 v/w maximum input light level - 8.8 9.6 - nw minimum detection limit - - 0.14 0.28 pwr.m.s. c4777 C4777-01 2
apd module c4777 series C4777-01 (typ. ta=25 ?c) frequency (hz) photo sensitivity (v/w) c4777 10 4 dc 1 k 10 k 100 k 1 m 10 m 100 m 1 g 10 5 10 6 10 7 10 8 10 9 10 10 spectral response frequency response response to stepped light kapdb0020eb wavelength (nm) photo sensitivity (a/w) (typ. ta = 25 ? c, = 800 nm) 200 400 600 800 1000 40 20 0 50 30 10 m = 100 m = 50 kaccb0048ea ta=25 c, gain m=100, input pulse width=50 ns x-axis: 10 ns/div., y-axis: 50 mv/div. ta=25 c, gain m=50, input pulse width=1 ms x-axis: 250 s/div., y-axis: 500 mv/div. kaccc0130ea kaccc0131ea general ratings parameter min. typ. max. unit +5 v +4.4 +5 +5.6 +15 v +14.4 +15 +15.6 power supply -15 v -14.4 -15 -15.6 v c4777 (+5 v) - +1.2 +1.5 c4777 (+15 v) - +0.2 +0.3 current consumption c4777 (-15 v) - -0.01 -0.02 a C4777-01 (+5 v) - +0.5 +1.0 C4777-01 (+15 v) - +0.15 +0.30 current consumption C4777-01 (-15 v) - -0.01 -0.02 a c4777 103 60 40 dimensional outline C4777-01 106.6 60 40 mm weight 350 g c4777 C4777-01 3
apd module c4777 series 60.0 40.0 37.0 30.0 57.0 45.0 9.5 2.0 106.6 60.0 29.1 5.2 0.2 power signal (4 ) m3 depth 3 (flange is removed.) front side base (2 ) m4 depth 4 weight: 350 g back flange is removed. photo- sensitive surface power supply signal output active area 3 mm dimensional outline (unit: mm) 60.0 40.0 37.0 30.0 57.0 45.0 6.0 2.0 103.0 60.0 25.5 4.0 0.2 power signal active area 0.5 mm (4 ) m3 depth 3 (flange is removed.) front side base (2 ) m4 depth 4 power supply weight: 350 g signal output back flange is removed. photo- sensitive surface kacca0071ea kacca0080ea when using C4777-01, do not terminate the output with a 50 ? load. when using c4777, be sure to terminate the output with a 50 ? load. c4777 C4777-01 4
apd module c4777 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2010 hamamatsu photonics k.k. cat. no. kacc1022e06 nov. 2010 dn 5


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